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BTT6050-2ERA bảng dữ liệu(PDF) 19 Page - Infineon Technologies AG |
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BTT6050-2ERA bảng dữ liệu(HTML) 19 Page - Infineon Technologies AG |
19 / 53 page Datasheet 19 Rev.1.00 2019-03-09 PROFET™+ 24V BTT6050-2ERA Protection Functions Figure 15 Undervoltage Behavior 6.3 Overvoltage Protection There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power transistor switches ON and the voltage across the logic section is clamped. As a result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin IN and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to overvoltage, the BTT6050-2ERA remains ON. In the case the BTT6050-2ERA was OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS capability. Figure 16 Overvoltage Protection with External Components undervoltage behavior .vsd VOUT VS(OP) VS(UV) VS IN0 DEN IS ZDESD GND OUT VS VBAT ZD(AZ) LOGIC DSEL Overvoltage protection.vsd ZDS(AZ) IN1 RIN RIN RDEN RDSEL RSENSE RIS ISOV ZIS(AZ) ZGND L, RL |
Số phần tương tự - BTT6050-2ERA |
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