MJ10009

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0, Vclamp = Rated VCEO)

VCEO(sus)

500

—

—

Vdc

Collector Emitter Sustaining Voltage (Table 1, Figure 12)

(IC = 2 A, Vclamp = Rated VCEX, TC = 100_C, VBE(off) = 5 V)

(IC = 10 A, Vclamp = Rated VCEX, TC = 100_C, VBE(off) = 5 V)

VCEX(sus)

500

375

—

—

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEV

—

—

—

—

0.25

5

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

ICER

—

—

5

mAdc

Emitter Cutoff Current

(VEB = 2 Vdc, IC = 0)

IEBO

—

—

175

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 11

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 10 Adc, VCE = 5 Vdc)

hFE

40

30

—

—

400

300

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 500 mAdc)

(IC = 20 Adc, IB = 2 Adc)

(IC = 10 Adc, IB = 500 mAdc, TC = 100_C)

VCE(sat)

—

—

—

—

—

—

2

3.5

2.5

Vdc

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 500 mAdc)

(IC = 10 Adc, IB = 500 mAdc, TC = 100_C)

VBE(sat)

—

—

—

—

2.5

2.5

Vdc

Diode Forward Voltage (1)

(IF = 10 Adc)

Vf

—

3

5

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

hfe

8

—

—

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

Cob

100

—

325

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 10 A,

IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

v 2%).

td

—

0.12

0.25

µs

Rise Time

(VCC = 250 Vdc, IC = 10 A,

IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

v 2%).

tr

—

0.5

1.5

µs

Storage Time

IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

v 2%).

ts

—

0.8

2.0

µs

Fall Time

v 2%).

tf

—

0.2

0.6

µs

Inductive Load, Clamped (Table 1)

Storage Time

(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc, TC = 100_C)

tsv

—

1.5

3.5

µs

Crossover Time

(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc, TC = 100_C)

tc

—

0.36

1.6

µs

Storage Time

(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc)

tsv

—

0.8

—

µs

Crossover Time

(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,

VBE(off) = 5 Vdc)

tc

—

0.18

—

µs

(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(2) Pulse Test: PW = 300

µs, Duty Cycle ≤ 2%.