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MJ10007 bảng dữ liệu(PDF) 6 Page - ON Semiconductor |
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MJ10007 bảng dữ liệu(HTML) 6 Page - ON Semiconductor |
6 / 8 page MJ10007 6 Motorola Bipolar Power Transistor Device Data The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 20 4.0 Figure 11. Forward Bias Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 2.0 1.0 0.5 0.1 6.0 10 20 40 400 60 0.02 TC = 25°C dc 0.2 100 200 350 100 µs 10 µs 10 0 Figure 12. Reverse Bias Switching Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 8 6 0 500 2 4 300 400 100 200 VBE(off) = 5 V TURN OFF LOAD LINE BOUNDARY FOR MJ10007 THE LOCUS FOR MJ10006 IS 50 V LESS 1.0 ms 5.0 ms MJ10007 VBE(off) = 2 V VBE(off) = 0 V TJ v 100°C 0.05 5.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 11 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case tem- perature by using the appropriate curve on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as VCEX(sus) at a given collector current and represents a voltage–current condition that can be sus- tained during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never sub- jected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. 100 80 60 20 0 0 40 80 120 200 Figure 13. Power Derating TC, CASE TEMPERATURE (°C) THERMAL DERATING SECOND BREAKDOWN DERATING 160 40 |
Số phần tương tự - MJ10007 |
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Mô tả tương tự - MJ10007 |
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