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FM1100-MH bảng dữ liệu(PDF) 1 Page - Formosa MS

tên linh kiện FM1100-MH
Giải thích chi tiết về linh kiện  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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nhà sản xuất  FORMOSA [Formosa MS]
Trang chủ  http://www.formosams.com
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FM1100-MH bảng dữ liệu(HTML) 1 Page - Formosa MS

  FM1100-MH Datasheet HTML 1Page - Formosa MS FM1100-MH Datasheet HTML 2Page - Formosa MS  
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FM120-M
THRU FM1100-M
HH
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECSOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0393 gram
(V)
(V)
(V)
(V)
(
oC)
FM120-MH
12
20
14
20
FM130-MH
13
30
21
30
FM140-MH
14
40
28
40
FM150-MH
15
50
35
50
FM160-MH
16
60
42
60
FM180-MH
18
80
56
80
FM1100-MH
10
100
70
100
0.50
0.70
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
25
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
10
mA
Thermal resistance
Junction to ambient
RqJA
98
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
120
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H


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