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FQD6N60CTF bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor

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Giải thích chi tiết về linh kiện  600V N-Channel MOSFET
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FQD6N60CTF bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor

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FQD6N60C Rev. A
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD6N60C
FQD6N60CTM
DPAK
380mm
16mm
2500
FQD6N60C
FQD6N60CTF
DPAK
380mm
16mm
2000
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.0 A
--
1.7
2.0
gFS
Forward Transconductance
VDS = 40 V, ID = 2.0 A
(Note 4)
--
4.8
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
620
810
pF
Coss
Output Capacitance
--
65
85
pF
Crss
Reverse Transfer Capacitance
--
7
10
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 5.5 A,
RG = 25 Ω
(Note 4, 5)
--
15
40
ns
tr
Turn-On Rise Time
--
45
100
ns
td(off)
Turn-Off Delay Time
--
45
100
ns
tf
Turn-Off Fall Time
--
45
100
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 5.5 A,
VGS = 10 V
(Note 4, 5)
--
16
20
nC
Qgs
Gate-Source Charge
--
3.5
--
nC
Qgd
Gate-Drain Charge
--
6.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
16
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 4.0 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
310
--
ns
Qrr
Reverse Recovery Charge
--
2.1
--
µC


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