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FQD6N60CTM bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FQD6N60CTM bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page 2 www.fairchildsemi.com FQD6N60C Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQD6N60C FQD6N60CTM DPAK 380mm 16mm 2500 FQD6N60C FQD6N60CTF DPAK 380mm 16mm 2000 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.0 A -- 1.7 2.0 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.0 A (Note 4) -- 4.8 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 620 810 pF Coss Output Capacitance -- 65 85 pF Crss Reverse Transfer Capacitance -- 7 10 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 5.5 A, RG = 25 Ω (Note 4, 5) -- 15 40 ns tr Turn-On Rise Time -- 45 100 ns td(off) Turn-Off Delay Time -- 45 100 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = 480 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) -- 16 20 nC Qgs Gate-Source Charge -- 3.5 -- nC Qgd Gate-Drain Charge -- 6.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.0 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) -- 310 -- ns Qrr Reverse Recovery Charge -- 2.1 -- µC |
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