TLIN1028-Q1_V01 datasheet(7/35 Pages) TI1

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TLIN1028-Q1

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SLLSEX4 – AUGUST 2019

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ELECTRICAL CHARACTERISTICS (continued)

parameters valid over –40

℃ ≤ TJ ≤ 150 ℃ range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

I BUS_PAS_dom

Receiver leakage current, dominant (ISO/DIS

17987 Param 13)

VLIN = 0 V, VSUP = 12 V Driver off/recessive,

RMEAS = 499 Ω; Figure 7

–1

mA

I BUS_PAS_rec1

Receiver leakage current, recessive (ISO/DIS

17987 Param 14)

VLIN ≥ VSUP, 5.5 V ≤ VSUP ≤ 36 V Driver off,

RMEAS = 1 kΩ; Figure 8

20

µA

I BUS_PAS_rec2

Receiver leakage current, recessive (ISO/DIS

17987 Param 14)

VLIN = VSUP, Driver off, RMEAS = 1 kΩ;

Figure 8

–8

8

µA

I BUS_NO_GND

Leakage current, loss of ground (ISO/DIS 17987

Param 15)

GND = VSUP, VSUP = 12 V, 0 V ≤ VLIN ≤ 28

V, RMEAS = 1 kΩ; Figure 9

–1

1

mA

IBUS_NO_BAT

Leakage current, loss of supply (ISO/DIS 17987

Param 16)

0 V

≤ VLIN ≤ 28 V, VSUP = GND, RMEAS = 10

k

Ω; Figure 10

8

µA

VBUSdom

Low level input voltage (ISO/DIS 17987 Param

17)

LIN dominant (including LIN dominant for

wake up); Figure 3, Figure 4

0.4

VSUP

VBUSrec

High level input voltage (ISO/DIS 17987 Param

18)

LIN recessive; Figure 3, Figure 4

0.6

VSUP

VBUS_CNT

Receiver center threshold (ISO/DIS 17987 Param

19)

VBUS_CNT = (VIL + VIH)/2; Figure 3, Figure 4

0.475

0.5

0.525

VSUP

VHYS

Hysteresis voltage (ISO/DIS 17987 Param 20)

VHYS = (VIL - VIH); Figure 3, Figure 4

0.175

VSUP

VSERIAL_DIODE

Serial diode LIN term pull-up path (ISO/DIS

17987 Param 21)

By design and characterization

0.4

0.7

1.0

V

RSLAVE

Pull-up resistor to VSUP (ISO/DIS 17987 Param

26)

Normal and Standby modes

20

45

60

k

Ω

IRSLEEP

Pull-up current source to VSUP

Sleep mode, VSUP = 12 V, LIN = GND

–20

–2

µA

CLIN,PIN

Capacitance of the LIN pin

55

pF

EN INPUT TERMINAL

VIH

High level input voltage

2

5.5

V

VIL

Low level input voltage

–0.3

0.8

V

VHYS

Hysteresis voltage

By design and characterization

30

500

mV

IIL

Low level input current

EN = Low

–5

0

5

µA

REN

Internal pull-down resistor

125

350

800

k

Ω

nRST TERMINAL (OPEN DRAIN OUTPUT)

ILKG

Leakage current, high-level

LIN = VSUP, nRST = VCC

–5

5

µA

VOL

Low-level output voltage

Based upon external pull up to VCC

0.2

VCC

IOL

Low-level output current, open drain

LIN = 0 V, nRST = 0.4 V

1.5

mA

DUTY CYCLE CHARACTERISTICS

D112V

Duty Cycle 1 (ISO/DIS 17987 Param 27)

THREC(MAX) = 0.744 x VSUP,

THDOM(MAX) = 0.581 x VSUP,

VSUP = 5.5 V to 18 V, tBIT = 50 µs (20 kbps),

D1 = tBUS_rec(min)/(2 x tBIT) (See Figure 11,

Figure 12)

0.396

D212V

Duty Cycle 2 (ISO/DIS 17987 Param 28)

THREC(MIN) = 0.422 x VSUP,

THDOM(MIN) = 0.284 x VSUP, VSUP = 5.5 V to

18 V,

tBIT = 50 µs (20 kbps), D2 = tBUS_rec(MAX)/(2 x

tBIT) (See Figure 11, Figure 12)

0.581

D312V

Duty Cycle 3 (ISO/DIS 17987 Param 29)

THREC(MAX) = 0.778 x VSUP, THDOM(MAX) =

0.616 x VSUP,

VSUP = 5.5 V to 18 V, tBIT = 96 µs (10.4

kbps),

D3 = tBUS_rec(min)/(2 x tBIT) (See Figure 11,

Figure 12)

0.417

D412V

Duty Cycle 4 (ISO/DIS 17987 Param 30)

THREC(MIN) = 0.389 x VSUP,

THDOM(MIN) = 0.251 x VSUP,

VSUP = 5.5 V to 18 V, tBIT = 96 µs (10.4

kbps),

D4 = tBUS_rec(MAX)/(2 x tBIT) (See Figure 11,

Figure 12)

0.59

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Texas Instruments	TLIN1028-Q1	1Mb / 38P	[Old version datasheet] TLIN1028-Q1 Automotive Local Interconnect Network (LIN) Transceiver with Integrated Voltage Regulator

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