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LM5181-Q1 bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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LM5181-Q1 bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 33 page  4 LM5181-Q1 SNVSBN6 – APRIL 2020 www.ti.com Product Folder Links: LM5181-Q1 Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted) (1) MIN MAX UNIT Input voltage VIN to GND –0.3 70 V EN/UVLO to GND –0.3 70 TC to GND –0.3 6 SS/BIAS to GND –0.3 14 FB to GND –0.3 70.3 FB to VIN –0.3 0.3 RSET to GND –0.3 3 Output voltage SW to GND –1.5 100 V SW to GND (20-ns transient) –3 Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –55 150 °C (1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002 HBM ESD Classification Level 2 (1) ±2000 V Charged device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4B All pins except 1, 4, 5, and 8 ±500 Pins 1, 4, 5, and 8 ±750 7.3 Recommended Operating Conditions Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted) MIN NOM MAX UNIT VIN Input voltage 4.5 65 V VSW SW voltage 95 V VEN/UVLO EN/UVLO voltage 65 V VSS/BIAS SS/BIAS voltage 13 V TJ Operating junction temperature –40 150 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) LM5181-Q1 UNIT NGU (WSON) 8 PINS RΘJA Junction-to-ambient thermal resistance 41.3 °C/W RΘJC(top) Junction-to-case (top) thermal resistance 34.7 °C/W RΘJB Junction-to-board thermal resistance 19.1 °C/W ΨJT Junction-to-top characterization parameter 0.3 °C/W ΨJB Junction-to-board characterization parameter 19.2 °C/W RΘJC(bot) Junction-to-case (bottom) thermal resistance 3.2 °C/W |
Số phần tương tự - LM5181-Q1 |
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Mô tả tương tự - LM5181-Q1 |
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