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FQA90N10V2 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FQA90N10V2 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page 2 www.fairchildsemi.com FQA90N10V2 Rev. A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity AV290N10 FQA90N10V2 TO-3P - - 30 Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 100 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.1 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V VDS = 80V, TC = 150°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 52.5A -- 8.5 10 m Ω gFS Forward Transconductance VDS = 40V, ID = 52.5A (Note 4) -- 72 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 4730 6150 pF Coss Output Capacitance -- 1180 1530 pF Crss Reverse Transfer Capacitance -- 300 390 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100V, ID = 90A RG = 25Ω (Note 4, 5) -- 52 114 ns tr Turn-On Rise Time -- 492 994 ns td(off) Turn-Off Delay Time -- 304 618 ns tf Turn-Off Fall Time -- 355 720 ns Qg Total Gate Charge VDS = 80V, ID = 90A VGS = 10V (Note 4, 5) -- 147 191 nC Qgs Gate-Source Charge -- 28 -- nC Qgd Gate-Drain Charge -- 60 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 105 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 420 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 105A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 90A dIF/dt =100A/µs (Note 4) -- 114 -- ns Qrr Reverse Recovery Charge -- 0.54 -- µC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 105A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
Số phần tương tự - FQA90N10V2 |
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Mô tả tương tự - FQA90N10V2 |
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