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ES1PB bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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ES1PB bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
1 / 2 page Dimensions in inches and (millimeters) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0.80) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) REF 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) Cathode band 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.086 (2.18) 0.074 (1.88) 0.087 (2.20) 0.103 (2.60) Case Style SMP Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.) Parameter Symbol ES1PA ES1PB ES1PC ES1PD Unit Device marking code EA EB EC ED Maximum reverse voltage VRM 50 100 150 200 V Maximum average forward rectified current see Fig.1 IF(AV) 1.0 A Peak forward surge current 10ms single half sine-wave superimposed on rated load IFSM 30 A Typical thermal resistance (1) R θJA 105 R θJL 15 °C/W R θJC 20 Operating junction and Storage temperature range TJ, TSTG –55 to +150 °C Electrical Characteristics (TA = 25°C unless otherwise noted.) Parameter Symbol Value Unit Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C VF 0.865 V at IF=1A, TJ=25°C 0.920 Maximum reverse current TJ = 25°C 5.0 µA at rated VRM(2) TJ =125°C IR 500 Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr 15 ns Typical reverse recovery time at TJ=25°C 25 at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C trr 30 ns Typical reverse recovery time at TJ=25°C 8 at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C Qrr 10 nC Typical junction capacitance at 4.0V, 1MHz CJ 10 pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. R θJL is measured at the ter- minal of cathode band. R θJC is measured at the top centre of the body (2) Pulse test: 300µs pulse width, 1% duty cycle Features • Very low profile - typical height of 1.0mm • For surface mount application • Glass passivated chip junction • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • Built in strain relief, ideal for automated placement • High temperature soldering: 260°C maximum/10 seconds at terminals • Meets MSL level 1 per J-STD-020C Mechanical Data Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating Mounting Pad Layout ES1PA thru ES1PD Vishay Semiconductors formerly General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 15 ns Document Number 88918 www.vishay.com 23-Sep-04 1 New Product |
Số phần tương tự - ES1PB |
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Mô tả tương tự - ES1PB |
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