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FDZ2553NZ bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDZ2553NZ bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDZ2553NZ Rev C (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 12 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 0.9 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –0.3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 9.6 A VGS = 2.5 V, ID = 7.9 A VGS = 4.5 V, ID = 9.6 A, TJ=125 °C 12 16 16 14 20 24 m Ω ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 10 20 A gFS Forward Transconductance VDS = 5 V, ID = 9.6 A 45 S Dynamic Characteristics Ciss Input Capacitance 1240 pF Coss Output Capacitance 320 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 170 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.1 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 14 26 ns td(off) Turn–Off Delay Time 26 42 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 11 19 ns Qg Total Gate Charge 13 18 nC Qgs Gate–Source Charge 3 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 9.6 A, VGS = 5 V 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.7 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 20 nS Qrr Diode Reverse Recovery Charge IF = 9.6A, diF/dt = 100 A/µs 6 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the sol der ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. (a). RθJA = 60°C/W when mounted on a 1in 2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. |
Số phần tương tự - FDZ2553NZ |
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Mô tả tương tự - FDZ2553NZ |
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