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FDZ2553NZ bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

tên linh kiện FDZ2553NZ
Giải thích chi tiết về linh kiện  Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
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July 2003
©2003 Fairchild Semiconductor Corporation
FDZ2553NZ Rev C (W)
FDZ2553NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
® BGA MOSFET
General Description
Combining
Fairchild’s
advanced
2.5V
specified
PowerTrench
process
with
state-of-the-art
BGA
packaging, the FDZ2553N minimizes both PCB space
and RDS(ON).
This common drain BGA MOSFET
embodies a breakthrough in packaging technology
which enables the device to combine excellent thermal
transfer characteristics, high current handling capability,
ultra-low profile packaging, low gate charge, and low
RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• 9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 20 m
Ω @ VGS = 2.5 V
• Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
• ESD protection diode (note 3)
• Outstanding thermal transfer characteristics:
significantly better than SO-8.
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
Top
Absolute Maximum Ratings
T A=25
oC unless other wise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
9.6
A
– Pulsed
20
PD
Power Dissipation (Steady State)
(Note 1a)
2.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
°C/W
RθJB
Thermal Resistance, Junction-to-Ball
(Note 1)
6.3
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
0.6
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2553NZ
FDZ2553NZ
7’’
12mm
3000 units


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