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FDZ294N bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDZ294N bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page July 2005 ©2005 Fairchild Semiconductor Corporation FDZ294N Rev. B3 (W) FDZ294N N-Channel 2.5 V Specified PowerTrench ® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low RDS(ON). Applications • Battery management • Battery protection Features • 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 34 mΩ @ VGS = 2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.85mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Q g x RDS(ON) figure-of-merit • High power and current handling capability. GATE Bottom Top S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 6 A – Pulsed 10 PD Power Dissipation for Single Operation (Note 1a) 1.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity E FDZ294N 7” 8mm 3000 units Index slot |
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Mô tả tương tự - FDZ294N |
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