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14 / 15 page 14 RF Device Data Freescale Semiconductor MMG3010NT1 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 3 Mar. 2007 • Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 4 July 2007 • Replaced Case Outline 1514-01 with 1514-02, Issue D, p. 1, 11-13. Case updated to add missing dimension for Pin 1 and Pin 3. 5 Mar. 2008 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis (ACPR) unit of measure to dBc, p. 5 • Corrected S-Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 8, 9 Aug. 2009 • Data sheet archived. Part no longer manufactured. |
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