MMG3009NT1

1

RF Device Data

Freescale Semiconductor, Inc.

MMG3009NT1

0--6000 MHz, 15 dB

18 dBm

InGaP HBT GPA

Heterojunction Bipolar Transistor

(InGaP HBT)

Broadband High Linearity Amplifier

The MMG3009NT1 is a general purpose amplifier that is internally

input and output matched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 0 to 6000 MHz such as cellular,

PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--

signal RF.

Features

 Frequency: 0 to 6000 MHz

 P1dB: 18 dBm @ 900 MHz

 Small--Signal Gain: 15 dB @ 900 MHz

 Third Order Output Intercept Point: 34 dBm @ 900 MHz

 Single 5 V Supply

 Internally Matched to 50 Ohms

 Cost--effective SOT--89 Surface Mount Plastic Package

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Characteristic

Symbol

900

MHz

2140

MHz

3500

MHz

Unit

Small--Signal Gain

(S21)

15

14

12.5

dB

Input Return Loss

(S11)

IRL

--13

--26

--22

dB

Output Return Loss

(S22)

ORL

--17

--15

--24

dB

Power Output @1dB

Compression

P1dB

18

18

17.5

dBm

Third Order Output

Intercept Point

OIP3

34

32

31

dBm

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

7

V

Supply Current

300

mA

RF Input Power

10

dBm

Storage Temperature Range

--65 to +150

C

Junction Temperature

150

C

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 88C, 5 Vdc, 70 mA, no RF applied

81

C/W

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MMG3009NT1

Rev. 7, 9/2014

Freescale Semiconductor

Technical Data

 Freescale Semiconductor, Inc., 2005--2008, 2012, 2014. All rights reserved.