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FDG327NZ bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDG327NZ bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  April 2005 ©2005 Fairchild Semiconductor Corporation FDG327NZ Rev C(W) FDG327NZ 20V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Applications • DC/DC converter • Power management • Load switch Features • 1.5 A, 20 V. RDS(ON) = 90 m Ω @ V GS = 4.5 V. RDS(ON) = 100 m Ω @ V GS = 2.5 V RDS(ON) = 140 m Ω @ V GS = 1.8 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. SC70-6 D D G D D S Pin 1 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 8 ID Drain Current – Continuous (Note 1a) 1.5 A – Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.42 W PD (Note 1b) 0.38 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 300 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 333 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .37 FDG327NZ 7’’ 8mm 3000 units |
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Mô tả tương tự - FDG327NZ |
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