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STB130NS04ZBT4 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Clamped Voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
33
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 16 V,Tj = 25 °C
VDS = 16 V,Tj = 125 °C
10
100
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±10 V,Tj = 25 °C10
µA
VGSS
Gate-Source
Breakdown Voltage
IGS = ±100 µA
18
V
VGS(th)
Gate Threshold Voltage
VDS = VGS = ID = 1 mA
2
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V ,ID = 40 A
7
9
m
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS = 15 V, ID = 40 A
50
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1MHz, VGS = 0
2700
1275
285
pF
pF
pF
td(on)
tf
td(off)
tf
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Fall Time
VDD = 17.5 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
40
220
170
100
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 20 V, ID = 80 A,
VGS = 10 V
(see Figure 17)
80
20
27
105
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSD (1)
Forward On Voltage
ISD = 80 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A, di/dt = 100A/µs
VDD = 25V, Tj = 150°C
(see Figure 16)
90
0.18
4
ns
µC
A


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