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STB130NS04ZB bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
(*)When mounted on 1 inch² FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
CLAMPED
V
VDG
Drain-gate Voltage
CLAMPED
V
VGS
Gate- source Voltage
CLAMPED
V
ID
Drain Current (continuous) at TC = 25°C
80
A
ID
Drain Current (continuous) at TC = 100°C
60
A
IDG
Drain Gate Current (continuous)
± 50
mA
IGS
Gate Source Current (continuous)
± 50
mA
IDM ( )
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC = 25°C
300
W
Derating Factor
2.0
W/°C
VESD(G-S)
Gate-Source ESD(HBM-C=100 pF, R=1.5 K
Ω)
4KV
Tj
Tstg
Max Operating Junction Temperature
Storage Temperature
-55 to 175
°C
TO-220
D²PAK
TO-247
Unit
Rthj-case
Thermal Resistance Junction-case
Max
0.50
°C/W
Rthj-pcb (*)
Thermal Resistance Junction-pcb
Max
--
35
--
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max
62.5
--
50
Tl
Maximum Lead Temperature For Soldering
Purpose (1.6 mm from case, for 10 sec)
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
80
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
500
mJ


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