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BU323AP bảng dữ liệu(PDF) 4 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS
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BU323AP
3–4
Motorola Bipolar Power Transistor Device Data
Figure 9. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
0.05
1
2
5
10
20
50
100
200
2000
500
R
θJC(t) = r(t) RθJC
R
θJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
1000
50
5
Figure 10. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5
1
0.005
30
70
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
dc
100
µs
0.2
0.01
10
20
5.0 ms
1.0 ms
100
200 300
500
2
0.1
50
TC = 25°C
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
100
0
Figure 11. Power Derating
TC, CASE TEMPERATURE (°C)
80
0
80
120
40
20
40
160
200
60
THERMAL
DERATING
SECOND BREAKDOWN
DERATING
Figure 12. Ignition Test Circuit
0 Vdc
t1
50 ms
≈ 1K
≈ 30
B
470
VCC = 16 Vdc
1N4001
BC337
47
VZ
C
E
TUT
2.2
0.22
µF
100
1N4001
<1
11 mH
INDUCTIVE LOAD
t1 to be selected such that IC reaches 10 Adc before switch–off.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.
VZ = 350 V (BU323P)
VZ = 400 V (BU323AP)
at IZ = 20 mA


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