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3 / 11 page 3/11 STP9NK80Z - STF9NK80Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: DYNAMIC Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA 33.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.75 A 0.9 1.2 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 3.75 A 7.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1900 180 38 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 640V 75 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 400 V, ID = 3.75 A RG =4.7Ω VGS = 10 V (see Figure 19) 26 19 58 18 ns ns ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 640 V, ID = 7.5A, RG =4.7Ω, VGS = 10V (see Figure 20) 12 10 24 ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640V, ID = 7.5 A, VGS = 10V (see Figure 22) 60 12 35 84 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 7.5 30 A A VSD (1) Forward On Voltage ISD = 7.5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7.5 A, di/dt = 100A/µs VDD = 35V, Tj = 25°C (see Figure 20) 530 4.5 17 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7.5 A, di/dt = 100A/µs VDD = 35V, Tj = 150°C (see Figure 20) 690 6.4 17 ns µC A |
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Mô tả tương tự - STP9NK80Z |
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