BCW72LT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.004

TJ = 125°C

– 55

°C

25

°C

VCE = 1.0 V

VCE = 10 V

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 10. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*

qVC for VCE(sat)

qVB for VBE

0.1

0.2

0.5

Figure 11. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.002

TJ = 25°C

IC = 1.0 mA

10 mA

100 mA

Figure 12. Temperature Coefficients

50 mA

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

0

TA = 25°C

PULSE WIDTH = 300

µs

DUTY CYCLE

≤ 2.0%

IB = 500 µA

400

µA

300

µA

200

µA

100

µA

*APPLIES for IC/IB ≤ hFE/2

25

°C to 125°C

– 55

°C to 25°C

25

°C to 125°C

– 55

°C to 25°C

40

60

0.006 0.01

0.02 0.03

0.05 0.07 0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

20

30

50

70 100

0.005 0.01 0.02 0.05 0.1 0.2

0.5

1.0 2.0

5.0 10

20

5.0

10

15

20

25

30

35

40

1.2

1.0

0.8

0.6

0.4

0.2

0

– 2.4

0.8

0

– 1.6

– 0.8

1.0

2.0

5.0

10

20

50

100

0.1

0.2

0.5

200

100

80