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BC307B bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Amplifier Transistors(PNP Silicon)
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BC307 BC307B BC307C BC308C
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
BC307B
BC307C/308C
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC307
BC307B/308B
BC307C/308C
(IC = –100 mAdc, VCE = –5.0 Vdc)
BC307B
BC307C/308C
hFE
120
200
420
150
270
290
500
180
300
800
460
800
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat)
–0.10
–0.30
–0.25
–0.3
–0.6
Vdc
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
–0.7
–1.0
Vdc
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
–0.55
–0.62
–0.7
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
BC307,B,C
BC308C
fT
280
320
MHz
Common Base Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Ccbo
6.0
pF
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz)
BC307,B,C
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz)
BC308C
NF
2.0
2.0
10
10
dB
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.


Số phần tương tự - BC307B

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