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LMX2336USLEX bảng dữ liệu(PDF) 8 Page - National Semiconductor (TI) |
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LMX2336USLEX bảng dữ liệu(HTML) 8 Page - National Semiconductor (TI) |
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8 / 48 page  Absolute Maximum Ratings (Notes 1, 2, 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage V CC to GND −0.3V to +6.5V V P RF1 to GND −0.3V to +6.5V V P RF2 to GND −0.3V to +6.5V Voltage on any pin to GND (V I) V I must be < +6.5V −0.3V to V CC+0.3V Storage Temperature Range (T S) −65˚C to +150˚C Lead Temperature (solder 4 s) (T L) +260˚C 16-Pin TSSOP θ JA Thermal Impedance 137.1˚C/W 20-Pin TSSOP θ JA Thermal Impedance 114.5˚C/W 16-Pin CSP θ JA Thermal Impedance 130˚C/W 24-Pin CSP θ JA Thermal Impedance 112˚C/W Recommended Operating Conditions (Note 1) Power Supply Voltage V CC to GND +2.7V to +5.5V V P RF1 to GND V CC to +5.5V V P RF2 to GND V CC to +5.5V Operating Temperature (T A) −40˚C to +85˚C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate condi- tions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test condi- tions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: This device is a high performance RF integrated circuit with an ESD rating <2 kV and is ESD sensitive. Handling and assembly of this device should only be done at ESD protected work stations. Note 3: GND=0V Electrical Characteristics V CC =VP RF1=VP RF2 = 3.0V, −40˚C ≤ T A ≤ +85˚C, unless otherwise specified Symbol Parameter Conditions Value Units Min Typ Max I CC PARAMETERS I CCRF1 + RF2 Power Supply Current, RF1 + RF2 Synthesizers LMX2335U Clock, Data and LE = GND OSC in = GND PWDN RF1 Bit = 0 PWDN RF2 Bit = 0 3.0 4.0 mA LMX2336U 3.5 4.5 mA I CCRF1 Power Supply Current, RF1 Synthesizer Only LMX2335U Clock, Data and LE = GND OSC in = GND PWDN RF1 Bit = 0 PWDN RF2 Bit = 1 1.5 2.0 mA LMX2336U 2.0 2.5 mA I CCRF2 Power Supply Current, RF2 Synthesizer Only LMX2335U Clock, Data and LE = GND OSC in = GND PWDN RF1 Bit = 1 PWDN RF2 Bit = 0 1.5 2.0 mA LMX2336U 1.5 2.0 I CC-PWDN Powerdown Current LMX2335U/ Clock, Data and LE = GND OSC in = GND PWDN RF1 Bit = 1 PWDN RF2 Bit = 1 1.0 10.0 µA LMX2336U RF1 SYNTHESIZER PARAMETERS f IN RF1 RF1 Operating Frequency LMX2335U 100 1200 MHz LMX2336U 200 2000 MHz N RF1 RF1 N Divider Range Prescaler = 64/65 (Note 4) 192 131135 Prescaler = 128/129 (Note 4) 384 262143 R RF1 RF1 R Divider Range 3 32767 FφRF1 RF1 Phase Detector Frequency 10 MHz Pf IN RF1 RF1 Input Sensitivity 2.7V ≤ V CC ≤ 3.0V (Note 5) −15 0 dBm 3.0V < V CC ≤ 5.5V (Note 5) −10 0 dBm www.national.com 8 |
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