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STF6NK70Z bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 700V - 1.5ohm - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
700
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 2.5 A
1.5
1.8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance VDS = 15 V , ID = 2.5 A
4.4
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
930
105
22
pF
pF
pF
COSS eq (3).
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 560 V
70
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 350 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
17
18
45
30
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 560 V, ID = 5 A,
VGS = 10 V
(see Figure 20)
34
6.5
17
47
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
VSD (1)
Forward On Voltage
ISD = 5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100 A/µs
VDD = 35V
(see Figure 18)
432
2.37
11
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100 A/µs
VDD = 35V, Tj = 150°C
(see Figure 18)
588
3.38
11.5
ns
µC
A


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