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5 / 14 page Philips Semiconductors BUK9518-55A; BUK9618-55A TrenchMOS™ logic level FET Product data Rev. 01 — 27 August 2001 5 of 14 9397 750 08461 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C55 −− V Tj = −55 °C50 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 1 1.5 2 V Tj = 175 °C 0.5 −− V Tj = −55 °C −− 2.3 V IDSS drain-source leakage current VDS = 55 V; VGS =0V Tj =25 °C − 0.05 10 µA Tj = 175 °C −− 500 µA IGSS gate-source leakage current VGS = ±10 V; VDS =0V − 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A; Figure 7 and 8 Tj =25 °C − 14 18 m Ω Tj = 175 °C −− 36 m Ω VGS = 4.5 V; ID =25A −− 19 m Ω VGS =10V; ID =25A − 12 16 m Ω Dynamic characteristics Qg(tot) total gate charge VGS =5V;VDD =44V; ID =25A; Figure 14 − 34 − nC Qgs gate-to-source charge − 4.5 − nC Qgd gate-to-drain (Miller) charge − 14 − nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 − 1660 2210 pF Coss output capacitance − 290 350 pF Crss reverse transfer capacitance − 190 270 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =5V; RG =10 Ω − 21 − ns tr rise time − 126 − ns td(off) turn-off delay time − 95 − ns tf fall time − 97 − ns Ld internal drain inductance from drain lead 6 mm from package to centre of die − 4.5 − nH from contact screw on mounting base to centre of die SOT78 − 3.5 − nH from upper edge of drain mounting base to centre of die SOT404 − 2.5 − nH Ls internal source inductance from source lead to source bond pad − 7.5 − nH |
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