7 / 15 page
9397 750 13519
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
7 of 15
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ng52
0.0
0.5
1.0
1.5
2.0
2.5
-60
0
60
120
180
Tj (
°C)
VGS(th)
(V)
max
typ
min
03ng53
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
VGS (V)
ID
(A)
max
typ
min
03nj62
0
50
100
150
200
0
2040
6080
ID (A)
gfs
(S)
03nj67
0
2000
4000
6000
8000
10
-1
1
10
10
2
VDS (V)
C
(pF)
Ciss
Coss
Crss