STPS2045C

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Table 3: Absolute Ratings (limiting values, per diode)

Table 4: Thermal Resistance Parameters

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 380 µs,

To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.015 IF

2

(RMS)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

45

V

30

A

Average forward current

δ = 0.5

TO-220AB /

10

A

TO-220FPAB

20

Surge non repetitive forward current

tp = 10ms sinusoidal

180

A

Repetitive peak reverse current

tp = 2µs F = 1kHz

square

1A

Non repetitive peak reverse current

tp = 100ms square

2

A

Repetitive peak avalanche power

tp = 1µs Tj = 25°C

4000

W

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature *

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

* :

thermal runaway condition for a diode on its own heatsink

Symbol

Parameter

Value

Unit

Junction to case

Total

2.2

1.3

°C/W

TO-220FPAB

Per diode

Total

4.5

3.5

Coupling

0.3

°C/W

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

Reverse leakage current

100

µA

715

mA

Forward voltage drop

0.5

0.57

V

0.84

0.65

0.72

dPtot

dTj

---------------

1

Rth j

a

–

()

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