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2SK1412LS bảng dữ liệu(PDF) 1 Page - Sanyo Semicon Device |
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1 / 4 page 2SK1412LS No.4228-1/4 Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 0.1 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 0.2 A Allowable Power Dissipation PD 2.0 W Tc=25 °C20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0 100 µA Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 ±100 nA (Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source. Continued on next page. Marking : K1412 Features • Low ON-resistance, low input capacitance. • Ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Micaless package facilitating mounting. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN4228B 2SK1412LS Package Dimensions unit : mm 2078C [2SK1412LS] N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 0.7 2.55 2.55 1.2 0.9 0.75 1.2 4.5 2.8 12 3 10.0 3.2 |
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