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2SA0914 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

tên linh kiện 2SA0914
Giải thích chi tiết về linh kiện  For audio system/pli drive
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nhà sản xuất  PANASONIC [Panasonic Semiconductor]
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2SA0914 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: December 2003
SJD00005CED
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC =
−100 µA, I
B = 0
−150
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −100 V, IE = 0
−1
µA
Forward current transfer ratio *
hFE
VCE
= −5 V, I
C
= −10 mA
130
330
Collector-emitter saturation voltage
VCE(sat)
IC = −30 mA, IB = −3 mA
−1V
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
70
MHz
Collector output capacitance
Cob
VCB = −6 V, IE = 0, f = 1 MHz
5
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−150
V
Collector-emitter voltage (Base open)
VCEO
−150
V
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
R
S
hFE
130 to 220
185 to 330
8.0
+0.5
–0.1
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
2SA0914 (2SA914)
Silicon PNP epitaxial planar type
For audio system/pli drive
Complementary to 2SC1953
■ Features
• A complementary pair with 2SC1953, is optimum for the pre-
driver stage of a 60 W to 100 W output amplifier
• TO-126B package which requires no insulation plate for instal-
lation to the heat sink
■ Absolute Maximum Ratings T
C
= 25°C


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