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BUK9006-55A bảng dữ liệu(PDF) 4 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  N-channel Enhancement mode field-effect power Transistor
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Philips Semiconductors
BUK9006-55A
TrenchMOS™ logic level FET
Preliminary data
Rev. 01 — 1 August 2003
4 of 10
9397 750 11571
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Remark: Figures 1, 2, and 3 measured on die assembled in SOT78 with
3 x 350
µm source bond wires.
Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A
Fig 1.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 2.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C; tp = 300 µs
Fig 3.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 4.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nn87
0
100
200
300
400
02
46
8
10
VDS (V)
ID
(A)
5
10
8
6
Label is VGS (V)
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
03nn86
5
6
7
8
9
0
5
10
15
VGS (V)
RDSon
(m
Ω)
03nn88
5
10
15
20
0
100
200
300
400
ID (A)
RDSon
(m
Ω)
4
5
10
Label is VGS (V)
3
3.2
3.4
3.6
3.8
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=


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