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2 / 12 page STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N 2/12 Table 3: Absolute Maximum ratings (*) Limited only by maximum temperature allowed (1) Pulse width limited by safe operating area (2) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD =80%V(BR)DSS. Table 4: Thermal Data Table 5: Avalanche Characteristics ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off (2) Characteristic value at turn off on inductive load Symbol Parameter Value Unit TO-220/I²PAK TO-247/D²PAK TO-220FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ)600 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuous) at TC = 25°C 20 20 (*) A ID Drain Current (continuous) at TC = 100°C 12.8 12.8 (*) A IDM (1) Drain Current (pulsed) 80 80 (*) A PTOT Total Dissipation at TC = 25°C 160 40 W Derating Factor 1.28 0.32 W/°C dv/dt (2) Peak Diode Recovery voltage slope TBD V/ns Tstg Storage Temperature – 55 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-220/I²PAK TO-247/D²PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) TBD A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) TBD mJ Symbol Parameter Test Conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V dv/dt(2) Drain Source Voltage Slope Vdd=TBD, Id=TBD, Vgs=TBD TBD V/ns IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3 4V RDS(on Static Drain-source On Resistance VGS = 10 V, ID = 10 A 0.140 0.170 Ω |
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