DS06-10801-4E

FUJITSU SEMICONDUCTOR

DATA SHEET

Semicustom

CMOS

CA91 Series

■ DESCRIPTION

pre-diffused IP macros into base masters and pre-designed common 3 to 4 metal layers out of 6 to 7 layers.

By using 0.11

µm CMOS process technology, the devices can support 6 million logic gates, 4.55 Mbits SRAM

and 3.125 Gbps high speed transmission macros. Ultra-high pin count FC-BGA (up to 729 pins to 1681 pins)

packages are available.

■ FEATURES

• High-speed, large scale ASIC produced in short development time:

TAT = One third compared with Standard Cell ASICs (target value)

• Uses an architecture that simplifies physical design tasks.

• Pre-designed common masters with IR-drop free.

• Pre-designed test circuit insertion to reduce test synthesis tasks.

• Uses a dedicated timing-driven layout tool to reduce development time.

• Signal Integrity Free (pre-designed main clock trees without design verifications)

• Max built-in gate number : 6,000,000 gates or more

• Technology : 0.11

µm Silicon gate CMOS, 6 to 7-metal layers (wiring material: copper), low-k inter-layer film

• Internal cells support high-speed operation

• Power supply voltage : +1.2 V ± 0.1 V/2.5 V

± 0.2 V (Dual power supply. Needs 1.5 V power supply during using

HTSL.) .

• Operation junction temperature :

−40 °C to +125 °C (standard)

• Max operating frequency: 333 MHz (internal circuit)

• Support for fast interface/macro (200 MHz/400 MHz DDR I/F, 2.5 Gbps PCI Express, 3.125 Gbps XAUI, etc.)

• Special interfaces (P-CML,LVDS,PCI,HSTL,SSTL-2, etc.)

• Embedded macro : PLL, SRAM

• 8-channel clock supply system incorporating a PLL

• Supports Memory-BIST/Boundary-SCAN

• Package : FC-BGA (729 pins to 1681 pins)

• ARM core is supported.

Note : It contains under planning.