STB12NK80ZT4 datasheet(4/15 Pages) STMICROELECTRONICS

tên linh kiện	STB12NK80ZT4

Giải thích chi tiết về linh kiện	N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

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2 Electrical characteristics

STB12NK80Z - STP12NK80Z - STW12NK80Z

4/15

Table 7.

Source drain diode

Table 8.

Gate-source zener diode

(1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Pulse width limited by safe operating area

(3) Limited only by maximum temperature allowed

(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%

(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80%VDSS

(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but

also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this

respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDMNote 2

Source-drain Current

Source-drain Current (pulsed)

10.5

42

A

VSDNote 4

Forward on Voltage

ISD=10.5 A, VGS=0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD=10.5A, di/dt = 100A/µs,

VDD=100 V, Tj=150°C

635

5.9

18.5

ns

µC

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Note 6

Gate-Source

Breakdown Voltage

Igs=±1mA

(Open Drain)

30

V

Số phần tương tự - STB12NK80ZT4

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB12NK80Z	522Kb / 16P	N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET
New Jersey Semi-Conduct...	STB12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STB12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STB12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
Inchange Semiconductor ...	STB12NK80Z	333Kb / 2P	isc N-Channel MOSFET Transistor

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Mô tả tương tự - STB12NK80ZT4

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB12NK80Z	522Kb / 16P	N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET
New Jersey Semi-Conduct...	STP12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STW12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STB12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
STMicroelectronics	STW12NK80Z	299Kb / 9P	N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STB10NK60Z	492Kb / 19P	N-channel 600V - 0.65廓 - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH??Power MOSFET
	STB10NK60Z	860Kb / 19P	N-channel 650 V, 0.65 廓, 10 A, SuperMESH??Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247
	STB12NK80Z-S	212Kb / 9P	N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET
	STP8NK80Z	419Kb / 15P	N-channel 800V - 1.3廓 - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET
	STP10NK80Z	458Kb / 11P	N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

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