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2SD0965 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: January 2003
SJC00200BED
2SD0965 (2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 µA, I
C
= 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 01
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 7 V, I
C
= 0
0.1
µA
Forward current transfer ratio
hFE1 *
VCE = 2 V, IC = 0.5 A
230
600
hFE2
VCE = 2 V, IC = 1 A
150
Collector-emitter saturation voltage
VCE(sat)
IC
= 3 A, I
B
= 0.1 A
0.28
1.00
V
Transition frequency
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
26
50
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank
Q
R
hFE1
230 to 380
340 to 600
Note) The part number in the parenthesis shows conventional part number.


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