2N2218AL datasheet(1/2 Pages) MICROSEMI

tên linh kiện	2N2218AL

Giải thích chi tiết về linh kiện	NPN SWITCHING SILICON TRANSISTOR

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TECHNICAL DATA

NPN SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/251

Devices

Qualified Level

2N2218

2N2218A

2N2218AL

2N2219

2N2219A

2N2219AL

JAN

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Symbol

2N2218

2N2219

2N2218A; L

2N2219A; L

Unit

Collector-Emitter Voltage

VCEO

30

50

Vdc

Collector-Base Voltage

VCBO

60

75

Vdc

Emitter-Base Voltage

VEBO

5.0

6.0

Vdc

Collector Current

IC

800

mAdc

Total Power Dissipation

@ TA = +25

0C(1)

@ TC = +25

0C(2)

PT

0.8

3.0

W

Operating & Storage Junction Temp. Range

Top, Tstg

-55 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

59

0C/W

1) Derate linearly 4.6 mW/

0C above TA > +250C

2) Derate linearly 17.0 mW/

0C above TC > +250C

TO- 39* (TO-205AD)

2N2218, 2N2218A

2N2219, 2N2219A

TO-5*

2N2218AL,

2N2219AL

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IE = 10 mAdc

2N2218; 2N2219

2N2218A; L; 2N2219A; L

V(BR)CEO

30

50

Vdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

2N2218; 2N2219

VEB = 6.0 Vdc

2N2218A; L; 2N2219A; L

VEB = 4.0 Vdc

All Types

IEBO

10

µAdc

ηAdc

Collector-Base Cutoff Current

VCE = 30 Vdc

2N2218; 2N2219

VCE = 50 Vdc

2N2218A; L; 2N2219A; L

ICES

10

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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Số phần tương tự - 2N2218AL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Semicoa Semiconductor	2N2218AL	307Kb / 2P	Silicon NPN Transistor

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