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STD3PS25 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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June 2003
STD3PS25 - STD3PS25-1
P-CHANNEL 250V - 2.1
Ω - 3A DPAK/IPAK
MESH OVERLAY™ MOSFET
s
TYPICAL RDS(on) = 2.1Ω
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
GATE-SOURCE ZENER DIODE
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
CONSUMER
s
LIGHTING
ABSOLUTE MAXIMUM RATINGS
TYPE
VDSS
RDS(on)
ID
STD3PS25
STD3PS25-1
250 V
250 V
< 2.8
< 2.8
3A
3A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
250
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
250
V
VGS
Gate- source Voltage
±25
V
ID
Drain Current (continuous) at TC = 25°C
3A
ID
Drain Current (continuous) at TC = 100°C
1.9
A
IDM (1)
Drain Current (pulsed)
12
A
PTOT
Total Dissipation at TC = 25°C
45
W
Derating Factor
0.36
W/°C
Tstg
Storage Temperature
– 50 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
DPAK
1
3
IPAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM


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