ST2100C..R Series

3

Bulletin I25198 rev. B 02/00

www.irf.com

dv/dt

Maximum linear rate of rise of

off-state voltage

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

500

V/µs

T

Parameter

ST2100C..R

Units

Conditions

250

mA

T

Blocking

P

GM

Maximum peak gate power

150

t

p

= 100µs

P

G(AV)

Maximum average gate power

10

I

GM

Max. peak positive gate current

30

A

Anode positive with respect to cathode

V

GM

Max. peak positive gate voltage

30

V

Anode positive with respect to cathode

-V

GM

Max. peak negative gate voltage

0.25

V

Anode positive with respect to cathode

I

GT

Maximum DC gate current

required to trigger

V

GT

Maximum gate voltage required

to trigger

Parameter

ST2100C..R

Units

Conditions

W

400

mA

T

C

= 25°C, V

DRM

= 5V

4V

T

V

GD

DC gate voltage not to trigger

0.25

V

T

C

= 125°C

Max. gate current/voltage not to

trigger is the max. value which

will not trigger any unit with rated

V

Triggering

T

125

On-state (conducting)

T

stg

Max. storage temperature range

-55 to 125

R

thJ-C

Thermal resistance, junction

0.019

DC operation single side cooled

to case

0.0095

DC operation double side cooled

R

th(C-h)

Thermal resistance, case

0.004

Single side cooled

to heatsink

0.002

Double side cooled

F

Mounting force ± 10%

wt

Approximate weight

1600

g

Case style

(R-PUK)

See Outline Table

Parameter

ST2100C..R

Units

Conditions

Thermal and Mechanical Specification

°C

Clamping force 43KN with

mounting compound

43000

(4400)

N

(Kg)

∆R

thJ-C

Conduction

(The following table shows the increment of thermal resistence R

K/W

K/W

180°

0.0010

0.0010

T

J

= T

J

max.

120°

0.0017

0.0017

K/W

60°

0.0044

0.0044

Conduction angle

Single side

Double side

Units

Conditions