YY9 datasheet(2/8 Pages) A-POWER

tên linh kiện	YY9

Giải thích chi tiết về linh kiện	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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nhà sản xuất	A-POWER [Advanced Power Electronics Corp.]

Trang chủ	http://www.a-power.com.tw

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N-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=1mA

100

-

V

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=2A

-

325

mΩ

VGS=4.5V, ID=2A

-

340

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1.4

-

3

V

gfs

Forward Transconductance

VDS=10V, ID=2A

-

7.5

-

S

IDSS

Drain-Source Leakage Current

VDS=80V, VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

-

+30

uA

Qg

Total Gate Charge

ID=2A

-

6.5

10.4

nC

Qgs

Gate-Source Charge

VDS=50V

-

1.4

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

-

1.3

-

nC

td(on)

Turn-on Delay Time

VDS=50V

-

15

-

ns

tr

Rise Time

ID=1A

-

12

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω

-63

-

ns

tf

Fall Time

VGS=10V

-

27

-

ns

Ciss

Input Capacitance

VGS=0V

-

310

496

pF

Coss

Output Capacitance

VDS=50V

-

21

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

14

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

VSD

Forward On Voltage

2

IS=1A, VGS=0V

-

1.3

V

trr

Reverse Recovery Time

IS=2A, VGS=0V

-

18

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

13

-

nC

2

AP10C325Y

.

Mô tả tương tự - YY9

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