YY9 datasheet(5/8 Pages) A-POWER

tên linh kiện	YY9

Giải thích chi tiết về linh kiện	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download	8 Pages

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nhà sản xuất	A-POWER [Advanced Power Electronics Corp.]

Trang chủ	http://www.a-power.com.tw

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5 / 8 page

AP10C325Y

N-Channel

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Normalized BVDSS v.s. Junction

5

0

2

4

6

8

10

12

024

68

10

Q G , Total Gate Charge (nC)

I D =2 A

V DS =50 V

0

100

200

300

400

500

600

1

21

41

61

81

101

121

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

1

10

0.01

0.1

1

10

100

1000

V DS , Drain-to-Source Voltage (V)

100us

1ms

10ms

100ms

1s

DC

T A =25

o C

Single Pulse

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t , Pulse Width (s)

0.02

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 210℃/W

t

T

0.01

Operation in this area

limited by RDS(ON)

0

2

4

6

8

10

012

3456

V GS , Gate-to-Source Voltage (V)

T j =150

o CT

j =25

o C

V DS =10V

0

0.4

0.8

1.2

1.6

2

-100

-50

0

50

100

150

T j , Junction Temperature (

o C)

I D =1mA

.

Mô tả tương tự - YY9

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Mô tả tương tự - YY9

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