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SBX2040-3G bảng dữ liệu(PDF) 1 Page - Diotec Semiconductor

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Giải thích chi tiết về linh kiện  Schottky Barrier Rectifier Diodes Generation
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nhà sản xuất  DIOTEC [Diotec Semiconductor]
Trang chủ  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

SBX2040-3G bảng dữ liệu(HTML) 1 Page - Diotec Semiconductor

  SBX2040-3G Datasheet HTML 1Page - Diotec Semiconductor SBX2040-3G Datasheet HTML 2Page - Diotec Semiconductor  
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SBX2040-3G, SBX2045-3G
SBX2040-3G, SBX2045-3G
Schottky Barrier Rectifier Diodes 3rd Generation
Schottky-Gleichrichterdioden 3. Generation
IFAV = 20 A
VF@5A < 0.45 V
Tjmax = 150°C
VRRM = 40, 45 V
IFSM = 290/330 A
VF125 ~ 0.30 V @ 5 A
Version 2018-02-19
Ø 5.4 x 7.5
Dimensions - Maße [mm]
Typical Applications
Solar Bypass Diodes, Polarity
Protection, Free-wheeling diodes,
Output Rectification in DC/DC
Converters
Commercial grade 1)
Typische Anwendungen
Solar-Bypassdioden,
Verpolschutz, Freilaufdioden,
Ausgangsgleichrichtung in
Gleichstromwandlern
Standardausführung 1)
Features
Best trade-off between VF and IR 2)
Lowest value RthL for lowest Tj
Low forward voltage drop
Smaller package outline
than SBX2040/45
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Optimale Auswahl von VF und IR 2)
Niedrigster RthL Wert für niedrigstes Tj
Niedrige Fluss-Spannung
Gehäusegröße kleiner
als SBX2040/45
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
On request: on 13” reel
500
1000
Gegurtet in Ammo-Pack
Auf Anfrage: auf 13” Rolle
Weight approx.
2 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 3)
Grenzwerte 3)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
SBX2040-3G
40
40
SBX2045-3G
45
45
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
20 A 4)
Peak forward surge current,
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
290 A
330 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
i2t
480 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
≤ 200°C 2,5)
Storage temperature
Lagerungstemperatur
TS
-50...+175°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes”
3
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
4
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
5
Meets the Requirements of IEC 61215 bypass diode thermal test
Erfüllt die Anforderungen des IEC 61215 Bypass-Diodentests
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
Halogen
FREE
Ø 1.6
±0.05
Ø 5.4
±0.1


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