KTX321U datasheet(2/6 Pages) KEC

tên linh kiện	KTX321U

Giải thích chi tiết về linh kiện	EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR

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nhà sản xuất	KEC [KEC(Korea Electronics)]

Trang chủ	http://www.keccorp.com

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2 / 6 page

KTX321U

Revision No : 0

2003. 11. 20

2/6

Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )

Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-15V, IE=0

-

-100

nA

Emitter Cut-off Current

IEBO

VEB=-6V, IC=0

-

-100

nA

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-10 A

-15

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-1mA

-12

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=-10 A

-6

-

V

DC Current Gain

hFE

VCE=-2V, IC=-10mA

270

-

680

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-200mA, IB=-10mA

-

-100

-250

mV

Transition Frequency

fT

VCE=-2V, IC=-10mA, fT=100MHz

-

260

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

6.5

-

pF

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

IGSS

VGS= 20V, VDS=0V

-

1

A

Drain-Source Breakdown Voltage

V(BR)DSS

ID=100 A, VGS=0V

30

-

V

Drain Cut-off Current

IDSS

VDS=30V, VGS=0V

-

1

A

Gate Threshold Voltage

Vth

VDS=3V, ID=0.1mA

0.5

-

1.5

V

Forward Transfer Admittance

|Yfs|

VDS=3V, ID=10mA

25

-

mS

Drain-Source ON Resistance

RDS(ON)

ID=10mA, VGS=2.5V

-

4

7

Input Capacitance

Ciss

VDS=3V, VGS=0V, f=1MHz

-

8.5

-

pF

Reverse Transfer Capacitance

Crss

VDS=3V, VGS=0V, f=1MHz

-

3.3

-

pF

Output Capacitance

Coss

VDS=3V, VGS=0V, f=1MHz

-

9.3

-

pF

Switching Time

Turn-on Time

ton

VDD=5V, ID=10mA, VGS=0 5V

-

50

-

nS

Turn-off Time

toff

-

160

-

nS

Số phần tương tự - KTX321U

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
KEC(Korea Electronics)	KTX301	69Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
	KTX301E	69Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
	KTX301U	69Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
	KTX302U	406Kb / 4P	EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
	KTX303U	403Kb / 4P	EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)

More results

Mô tả tương tự - KTX321U

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
KEC(Korea Electronics)	KTX421U	71Kb / 6P	EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB7D0N65P1	450Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB6D0N40P	449Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB7D5N60P1	501Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB4D0N65P	397Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB4D0N80P1	504Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB4D5N60P	500Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB7D0N65P1	501Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB2D0N60P	501Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KF4N80F	389Kb / 6P	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Số phần tương tự - KTX321U

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