Document Number: 91254

www.vishay.com

S11-0441-Rev. B, 14-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFPG50, SiHFPG50

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The

TO-247AC

package

is

preferred

for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because its isolated mounting hole. It also provides

greater creepage distances between pins to meet the

requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

1000

2.0

190

23

110

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFPG50PbF

SiHFPG50-E3

SnPb

IRFPG50

SiHFPG50

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

1000

V

Gate-Source Voltage

± 20

Continuous Drain Current

6.1

A

3.9

24

Linear Derating Factor

1.5

W/°C

800

mJ

6.0

A

19

mJ

Maximum Power Dissipation

190

W

dV/dt

1.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply