5

LMZM23600

www.ti.com

SNVSB53 – FEBRUARY 2018

Product Folder Links: LMZM23600

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Copyright © 2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VIN to GND

–0.3

42

V

SW to GND

–0.3

V

BOOT to SW

–0.3

3.6

V

EN to GND

–0.3

42

V

FB to GND (3.3-V and 5-V options)

–0.3

16

V

FB to GND (ADJ option)

–0.3

5.5

V

PGOOD to GND

–0.3

16

V

PGOOD sink current

8

mA

MODE/SYNC to GND

–0.3

42

V

VCC to GND

-0.3

3.6

V

–40

125

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per

±2000

V

Charged device model (CDM), per JEDEC

±250

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input voltage

4

36

V

Output voltage (5 V)

0

5

V

Output voltage (3.3 V)

0

3.3

V

Output voltage (ADJ)

2.5

15

V

Output current (0.5 A)

0

0.5

A

Operating junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

LMZM23601

UNIT

SIL (USIP)

10 PINS

Junction-to-ambient thermal resistance

45

°C/W

Junction-to-top characterization parameter

3

°C/W

Junction-to-board characterization parameter

20

°C/W