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LANSDALE Semiconductor, Inc.
ML144110, ML144111
MAXIMUM RATINGS* (Voltages referenced to VSS)
Parameter
Symbol
Value
Unit
DC Supply Voltage
VDD
– 0.5 to + 18
V
Input Voltage, All Inputs
Vin
– 0.5 to VDD + 0.5
V
DC Input Current, per Pin
I
±
10
mA
Power Dissipation (Per Output)
TA = 70°C, MC144110
MC144111
TA = 85°C, MC144110
MC144111
POH
30
50
10
20
mW
Power Dissipation (Per Package)
TA = 70°C, MC144110
MC144111
TA = 85°C, MC144110
MC144111
PD
100
150
25
50
mW
Storage Temperature Range
Tstg
– 65 to + 150
°
C
* Maximum Ratings are those values beyond which damage to the device may occur.
ELECTRICAL CHARACTERISTICS (Voltages referenced to VSS, TA = 0 to 85°C unless otherwise indicated)
Symbol
Parameter
Test Conditions
VDD
Min
Max
Unit
VIH
High–Level Input Voltage (Din, ENB, CLK)
5
10
15
3.0
3.5
4
V
VIL
Low–Level Input Voltage (Din, ENB, CLK)
5
10
15
0.8
0.8
0.8
V
IOH
High–Level Output Current (Dout)
Vout = VDD – 0.5 V
5
– 200
µ
A
IOL
Low–Level Output Current (Dout)
Vout = 0.5 V
5
200
µ
A
IDD
Quiescent Supply Current
ML144110
ML144111
Iout = 0 µA
15
15
12
8
mA
Iin
Input Leakage Current (Din, ENB, CLK)
Vin = VDD or 0 V
15
±
1
µ
A
Vnonl
Nonlinearity Voltage (Rn Out)
See Figure 1
5
10
15
100
200
300
mV
Vstep
Step Size (Rn Out)
See Figure 2
5
10
15
19
39
58
137
274
411
mV
Voffset Offset Voltage from VSS
Din = $00, See Figure 1
1
LSB
IE
Emitter Leakage Current
VRn Out = 0 V
15
10
µ
A
hFE
DC Current Gain
IE = 0.1 to 10.0 mA
TA = 25°C
40
VBE
Base–to–Emitter Voltage Drop
IE = 1.0 mA
0.4
0.7
V
This device contains protection circuitry to
guard against damage due to high static
voltages or electric fields; however, it is ad-
vised that precautions be taken to avoid
application of voltage higher than maximum
rated voltages to this high–impedance circuit.
For proper operation it is recommended that
VinandVoutbeconstrainedtotherangeVSS≤
(Vin or Vout) ≤VDD.
Unused inputs must always be tied to an
appropriatelogic voltage level (e.g., either VSS
or VDD).
Issue A


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