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LA5619M bảng dữ liệu(PDF) 2 Page - Sanyo Semicon Device |
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LA5619M bảng dữ liệu(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page No. 5673-2/8 LA5619M Parameter Symbol Conditions Ratings Unit min typ max [Charge System] Charge voltage (when trickle is selected) VO1IO = 10 mA 4.4 4.6 4.7 V Charge voltage (when cycle is selected) VO2IO = 50 mA 4.7 4.9 5.0 V Differential charge voltage Vdif ∆VO = VO2 – VO1 0.2 0.3 0.4 V Cycle → trickle switching current ICT1 20 23 26 mA Trickle → cycle switching current ICT2 35 41 47 mA Output peak current IOP RL = 33 Ω 112.5 125 137.5 mA Line regulation (when trickle is selected) VOLN1 VCC = 8 to 14.5 V, IO = 10 mA 50 100 mV Line regulation (when cycle is selected) VOLN2 VCC = 8 to 14.5 V, IO = 50 mA 100 150 mV Load regulation (when trickle is selected) VOLD1 IO = 0.5 to 30 mA 50 100 mV Load regulation (when cycle is selected) VOLD2 IO = 50 to 60 mA 100 150 mV ICC1 IO = 0 mA 6 10 mV Current drain ICC2 IO = 50 mA (ICC2 includes IO) 65 73 mA ICC3 RL = 33 Ω (ICC3 includes IO) 155 175 mA CHG DET, OUT remaining voltage VCHG-LED IIN = 40 mA 1.1 1.3 V CHG DET, OUT leak voltage ICHG-LED VIN = 9 V 200 nA CHARGE detection current ICHG-DET1 on → off 0.15 0.25 0.35 mA ICHG-DET2 off → on 0.8 1.0 1.2 mA VCC DET remaining voltage VDET IIN = 40 mA 1.1 1.3 V VCC DET leak voltage IDET VIN = 9 V 200 nA VCC DET detection voltage VCC-DET 4.95 5.2 5.3 V VCC DET hysteresis width VCC-DET, HYS 0.05 0.1 0.2 V [Battery System] Battery detection voltage VBatt 3.17 3.3 3.43 V VBatt DET OUT1 pin’s remaining voltage VBAT-OUT1 IIN = 40 mA 0.3 0.5 V VBatt DET OUT1 pin’s leak current IBAT-OUT1 VIN = 5 V 200 nA Current drain when detection circuit is off IOFF batt = 2.5 V 5 6 µA Current drain when detection circuit is on ION No load 350 500 µA Current drain during Battery SAVE ISAVE VBatt CTRL = 4 V 20 30 µA VBatt DET OUT2 pin’s remaining voltage VBAT-OUT2 IIN = 40 mA 1.1 1.3 V [Internal Transistors for Reset] REST OUT remaining voltage VREST REST.IN = 2 µA, IIN = 50 µA 0.3 0.5 V REST OUT leak current IREST VIN = 5 V 200 nA [VBatt CTRL Pin] Threshold voltage VBatt-CTRL 1.10 1.27 1.50 V VBatt CTRL pin input current IBatt-CTRL VIN = 4 V 17 24 µA Operating Characteristics at Ta = 25°C, VCC = 9 V, Batt. IN = 4 V Operating temperature, Ta — °C Recommended board mounting Independent IC Pin Assignment Copper plating 180 mm2 Board material: Paper phenol t = 1.5 mm |
Số phần tương tự - LA5619M |
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Mô tả tương tự - LA5619M |
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