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CD214A-B160R bảng dữ liệu(PDF) 1 Page - Bourns Electronic Solutions

tên linh kiện CD214A-B160R
Giải thích chi tiết về linh kiện  Schottky Barrier Rectifier Chip Diode
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nhà sản xuất  BOURNS [Bourns Electronic Solutions]
Trang chủ  http://www.bourns.com
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CD214A-B160R bảng dữ liệu(HTML) 1 Page - Bourns Electronic Solutions

  CD214A-B160R Datasheet HTML 1Page - Bourns Electronic Solutions CD214A-B160R Datasheet HTML 2Page - Bourns Electronic Solutions CD214A-B160R Datasheet HTML 3Page - Bourns Electronic Solutions CD214A-B160R Datasheet HTML 4Page - Bourns Electronic Solutions  
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Features
n
RoHScompliant*
n
Lowprofile
n
Lowpowerloss,highefficiency
n
UL94V-0classification
Applications
n
SwitchModePowerSupplies
n
Portableequipmentbatteries
n
Highfrequencyrectification
n
DC/DCConverters
n
Telecommunications
CD214A-B1xRSeriesSchottkyBarrierRectifierChipDiode
*RoHSDirective2015/863,Mar31,2015andAnnex.
Specificationsaresubjecttochangewithoutnotice.
Thedevicecharacteristicsandparametersinthisdatasheetcananddovaryindifferentapplicationsandactualdeviceperformancemayvaryovertime.
Usersshouldverifyactualdeviceperformanceintheirspecificapplications.
General Information
Portable communications, computing and video equipment manufacturers are challenging the
semiconductor industry to develop increasingly smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip
package compatible with DO-214AC (SMA) size format. The Schottky Rectifier Diodes offer a
forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V.
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD214A-
Unit
B120R
B120LR
B140R
B140LR
B160R
B1100R
Maximum Repetitive Peak Reverse Voltage
VRRM
20
20
40
40
60
100
V
Maximum Average Forward Current
IF(AV)
1
A
Maximum Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
IFSM
30
A
Operating Junction Temperature Range
TOPR
-55 to +125
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Condition or Model
Min.
Typ.
Max.
Unit
Maximum Instantaneous Forward Voltage
@1 A (NOTE 1)
VF
CD214A-B120LR
CD214A-B140LR
0.37
0.38
V
CD214A-B120R
CD214A-B140R
0.47
0.50
CD214A-B160R
0.60
0.70
CD214A-B1100R
0.76
0.85
DC Reverse Current
IR
VR =
VRRM
CD214A-B120LR
CD214A-B140LR
0.35
1.0
mA
CD214A-B120R
CD214A-B140R
CD214A-B160R
CD214A-B1100R
0.02
0.2
mA
Typical Junction Capacitance
CJ
VR = 4 V, f = 1.0 MHz
110
pF
Typical Thermal Resistance
(NOTE 2)
Junction to
Ambient
RθJA
CD214A-B120R
CD214A-B140R
CD214A-B160R
CD214A-B1100R
88
°C/W
CD214A-B120LR
CD214A-B140LR
55
Junction to
Lead
RθJL
CD214A-B120R
CD214A-B140R
CD214A-B160R
CD214A-B1100R
28
CD214A-B120LR
CD214A-B140LR
17
NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle.
(2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas.


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