ACE1357B datasheet(2/6 Pages) ACE

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ACE1357B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

2

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=-250µA

-20

V

Zero gate voltage drain current

IDSS

VDS=-20V, VGS=0V

-1

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=-250µA

-0.4

-0.65

-0.9

V

Gate leakage current

IGSS

VGS=±12V, VDS=0V

±100

nA

Drain-source on-state resistance

RDS(ON)

VGS=-4.5V, ID=-2A

88

120

mΩ

VGS=-2.5V, ID=-1A

120

150

Forward trans conductance

gFS

VDS=-5V, ID=-2.8A

6.5

S

Diode forward voltage

VSD

ISD=-1.6A, VGS=0V

-0.86

-1.1

V

Max Diode Forward Voltage

IS

-1.6

A

Switching

Total gate charge

Qg

VGS=-4.5V, VDS=-6V, ID=-2.8A

4.9

nC

Gate-source charge

Qgs

0.62

Gate-drain charge

Qgd

1.07

Turn-on delay time

td(on)

VDD=-6V, RL=6Ω,ID =-1A,

VGEN = -4.5V RG = 6Ω

10.1

ns

Turn-on rise time

Tr

4.76

Turn-off delay time

td(off)

84.1

Turn-off fall time

Tf

25.2

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=-6V, f=1.0MHz

472

pF

Output capacitance

Coss

71

Reverse transfer capacitance

Crss

51

Notes:

1.

Pulse width limited by maximum junction temperature.

2.

Pulse test: PW≤300μ s, duty cycle≤2%.

3.

For design AID only, not subject to production testing.

4.

Switching time is essentially independent of operating temperature.

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