công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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LM2766 bảng dữ liệu(PDF) 3 Page - National Semiconductor (TI) |
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LM2766 bảng dữ liệu(HTML) 3 Page - National Semiconductor (TI) |
3 / 9 page Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V+ to GND, or V+ to V OUT) 5.8V SD (GND − 0.3V) to (V+ + 0.3V) V OUT Continuous Output Current 40 mA Output Short-Circuit Duration to GND (Note 3) 1 sec. Continuous Power Dissipation (T A = 25˚C)(Note 4) 600 mW T JMax(Note 4) 150˚C Operating Ratings θ JA (Note 4) 210˚C/W Junction Temperature Range −40˚ to 100˚C Ambient Temperature Range −40˚ to 85˚C Storage Temperature Range −65˚C to 150˚C Lead Temp. (Soldering, 10 seconds) 240˚C ESD Rating (Note 5) Human body model Machine model 2kV 200V Electrical Characteristics Limits in standard typeface are for T J = 25˚C, and limits in boldface type apply over the full operating temperature range. Un- less otherwise specified: V+ = 5V, C 1 =C2 = 1.0 µF. (Note 6) Symbol Parameter Condition Min Typ Max Units V+ Supply Voltage 1.8 5.5 V I Q Supply Current No Load 350 950 µA I SD Shutdown Supply Current 0.1 0.5 µA T A = 85˚C 0.2 V SD Shutdown Pin Input Voltage Shutdown Mode 0.6 V Normal Operation 2.0 I L Output Current 2.5V ≤ V IN ≤ 5.5V 20 mA 1.8V ≤ V IN < 2.5V 10 R OUT Output Resistance (Note 7) I L =20 mA 20 55 Ω f OSC Oscillator Frequency (Note 8) 220 400 700 kHz f SW Switching Frequency (Note 8) 110 200 350 kHz P EFF Power Efficiency I L = 20 mA to GND 94 % V OEFF Voltage Conversion Efficiency No Load 99.96 % Note 2: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. Note 3: VOUT may be shorted to GND for one second without damage. However, shorting VOUT to V+ may damage the device and should be avoided. Also, for tem- peratures above 85˚C, VOUT must not be shorted to GND or V+, or device may be damaged. Note 4: The maximum allowable power dissipation is calculated by using PDMax =(TJMax −TA)/θJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package. Note 5: The human body model is a 100pF capacitor discharged through a 1.5k Ω resistor into each pin. The machine model is a 200pF capacitor discharged directly into each pin. Note 6: In the test circuit, capacitors C1 and C2 are 1.0 µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output voltage and efficiency. Note 7: Specified output resistance includes internal switch resistance and capacitor ESR. See the details in the application information for positive voltage doubler. Note 8: The output switches operate at one half of the oscillator frequency, fOSC =2fSW. www.national.com 3 |
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