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BYZ50A47 bảng dữ liệu(PDF) 1 Page - Diotec Semiconductor |
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BYZ50A47 bảng dữ liệu(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page  BYZ50A22 ... BYZ50A47 | BYZ50K22 ... BYZ50K47 BYZ50A22 ... BYZ50A47 | BYZ50K22 ... BYZ50K47 Press-Fit Diodes – Protectifiers® Einpress-Dioden – Protectifiers® IFAV = 50 A VF < 1.1 V Tjmax = 200°C VWM = 17.8 ... 38.1 V VBR Min = 19.8 ... 42.3 V IFSM = 400/450 A Version 2018-01-08 Ø 12.75 x 4.2 Press-fit Dimensions - Maße [mm] Typical Applications On-board alternators Load dump protection Commercial grade 1) Typische Anwendungen Bordnetz-Generatoren “Load dump”-Schutz Standardausführung 1) Features TVS (suppressor) characteristic High junction temperature Press-fit assembly into aluminum plate Two polarity versions: A = Anode to lead wire K = Cathode to lead wire Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten TVS-(Begrenzer-)Charakteristik Hohe Sperrschichttemperatur Einpressmontage in Alu-Kühlblech Zwei Polaritäten: A = Anode am Anschlussdraht K = Kathode am Anschlussdraht Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Packed in cardboard trays 300 Verpackt in Einlagekartons Weight approx. 10 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Maximum ratings 2) Grenzwerte 2) Max. average forward current – Dauergrenzstrom TC = 150°C 3) IFAV 50 A Repetitive peak forward current – Periodischer Spitzenstrom f > 15 Hz TC = 150°C 3) IFRM 80 A Peak forward surge current Stoßstrom in Fluss-Richtung Half sine-wave Sinus-Halbwelle 50 Hz (10 ms) 60 Hz (8.3 ms) IFSM 400 A 450 A Rating for fusing – Grenzlastintegral t < 10 ms i2t 800 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+200°C -50...+200°C Peak junction temperature in case of load dump Spitzensperrschichttemperatur im “Load dump” Fall t < 400 ms TjM +215°C Maximum pressing force – Maximaler Einpressdruck FpM 4 kN Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Type / Typ Wire to / Draht an Breakdown voltage Abbruchspannung IT = 100 mA Reverse voltage Sperrspannung IR = 5 µA Max. clamping voltage Max. Begrenzerspanng. at / bei Ipp, tp = 1 ms Anode Cathode VBRmin [V] VBRmax [V] VR [V] VC [V] Ipp [A] BYZ50A22 BYZ50K22 19.8 24.2 > 17.8 31.9 235 BYZ50A33 BYZ50K33 29.7 36.3 > 26.8 47.7 157 BYZ50A39 BYZ50K39 35.1 42.9 > 31.6 56.4 133 BYZ50A47 BYZ50K47 42.3 51.7 > 38.1 67.8 111 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben 3 Temperature measured at the metallic base – Temperatur am Metallsockel gemessen © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS Ø 12.75 Ø ±0.5 11 1.3 A K |
Số phần tương tự - BYZ50A47 |
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Mô tả tương tự - BYZ50A47 |
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